2n7000 features free from secondary breakdown low power drive requirement ease of paralleling low c iss and fast switching speeds excellent thermal stability integral source-drain diode high input impedance and high gain complementary n- and p-channel devices applications motor controls converters ampli? ers switches power supply circuits drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) ? ? ? ? ? ? ? ? ? ? ? ? ? ? general description the supertex 2n7000 is an enhancement-mode (normally- off) transistor that utilizes a vertical dmos structure and supertexs well-proven silicon-gate manufacturing process. this combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coef? cient inherent in mos devices. characteristic of all mos structures, this device is free from thermal runaway and thermally-induced secondary breakdown. supertexs vertical dmos fets are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. ordering information device package bv dss /bv dgs (v) r ds(on) (max) () i d(on) (min) (ma) 2n7000 to-92 60 5.0 75 2N7000-G absolute maximum ratings parameter value drain to source voltage bv dss drain to gate voltage bv dgs gate to source voltage 30v operating and storage temperature -55c to +150c soldering temperature 1 +300c absolute maximum ratings are those values beyond which damage to the device may occur. functional operation under these conditions is not implied. continuous operation of the device at the absolute rating level may affect device reliability. all voltages are referenced to device ground. notes : 1. distance of 1.6mm from case for 10 seconds. pin con? guration n-channel enhancement-mode vertical dmos fets d g s to-92 (front view) -g indicates package is rohs compliant (green)
2 2n7000 electrical characteristics (t a = 25c unless otherwise speci? ed) symbol parameter min typ max units conditions bv dss drain-to-source breakdown voltage 60 - - v v gs = 0v, i d = 10a v gs(th) gate threshold voltage 0.8 - 3.0 v v gs = v ds , i d = 1.0ma i gss gate body leakage current - - 10 na v gs = 15v, v ds = 0v i dss zero gate voltage drain current - - 1.0 a v gs = 0v, v ds = 48v - - 1.0 ma v gs = 0v, v ds = 48v, t a = 125 o c i d(on) on-state drain current 75 - - ma v gs = 4.5v, v ds = 10v r ds(on) static drain-to-source on-state resistance - - 5.3 v gs = 4.5v, i d = 75ma - - 5.0 v gs = 10v, i d = 500ma g fs forward transconductance 100 - - mmho v ds = 10v, i d = 200ma c iss input capacitance - - 60 pf v gs = 0v, v ds = 25v, f = 1.0mhz c oss common source output capacitance - - 25 c rss reverse transfer capacitance - - 5 t (on) turn-on time - - 10 ns v dd = 15v, i d = 500ma, r gen = 25? t (off) turn-off time - - 10 v sd diode forward voltage drop - 0.85 - v v gs = 0v, i sd = 200ma notes: 1. all d.c. parameters 100% tested at 25 o c unless otherwise stated. (pulse test: 300s pulse, 2% duty cycle.) 2. all a.c. parameters sample tested. switching waveforms and test circuit thermal characteristics device package i d (continuous) * (ma) i d (pulsed) (ma) power dissipation @t c = 25 o c (w) jc ( o c/w) ja ( o c/w) i dr * (ma) i drm (ma) 2n7000 to-92 200 500 1.0 125 170 200 500 notes: * i d (continuous) is limited by max rated t j . 90% 10% 90% 90% 10% 10% pulse generator v dd r l output d.u.t. t (on) t d(on) t (off) t d(off) t f t r input input output 10v v dd r gen 0v 0v
3 2n7000 typical performance curves output characteristics 2.5 2.0 1.5 1.0 0.5 0102030 50 40 v ds (volts) i d ) s e r e p m a ( saturation characteristics 0246 10 8 v ds (volts) i d ) s e r e p m a ( maximum rated safe operating area 0.1 100 10 1.0 0.01 0.1 1.0 0.001 v ds (volts) i d ) s e r e p m a ( thermal response characteristics ) d e z i l a m r o n ( e c n a t s i s e r l a m r e h t 1.0 0.8 0.6 0.4 0.2 0.001 10 0.01 0.1 1 t p (seconds) transconductance vs. drain current 1.0 0.8 0.6 0.4 0.2 0 0 1.0 0.2 0.4 0.6 0.8 g s f ) s n e m e i s ( i d (amperes) power dissipation vs. case temperature 0150 100 50 2.0 1.0 125 75 25 p d ) s t t a w ( to-92 t a = -55 o c 25 o c 125 o c v ds v ds = 25v to-92 (pulsed) 8v 6v 4v v gs =10v 0 0 0 8v 6v 4v 2.5 2.0 1.5 1.0 0.5 0 to-92 (dc) t c = 25 o c to-92 p d = 1w t c = 25 o c t c ( o c) v gs = 10v
4 2n7000 typical performance curves (cont.) gate drive dynamic characteristics q g (nanocoulombs) v s g ) s t l o v ( t j ( o c) v ) h t ( s g ) d e z i l a m r o n ( r ) n o ( s d ) d e z i l a m r o n ( v (th) and r ds variation with temperature on-resistance vs. drain current r ) n o ( s d ) s m h o ( v b s s d ) d e z i l a m r o n ( t j ( o c) transfer characteristics v gs (volts) i d ) s e r e p m a ( i d (amperes) bv dss variation with temperature 0246810 2.5 2.0 1.5 1.0 0.5 -50 0 50 100 150 1.1 1.0 0.9 0 0 2.5 1.0 1.6 1.4 1.2 1.0 0.8 0.6 10 8 6 4 2 0 0.2 0.4 0.6 0.8 1.0 -50 0 50 100 150 v ds = 10v v (th) @ 1ma v gs = 4.5v v gs = 10v 0.5 1.5 2.0 1.0 2.0 3.0 5.0 4.0 t a = -55 o c 25 o c 125 o c 0 40 pf 40v 80 pf 0 1.9 1.6 1.3 1.0 0.7 0.4 v ds = 25v capacitance vs. drain-to-source voltage 100 ) s d a r a f o c i p ( c v ds (volts) 010203040 75 50 25 0 f = 1mhz c iss c oss c rss r ds @ 10v, 1.0a
5 2n7000 (the package drawing(s) in this data sheet may not re? ect the most current speci? cations. for the latest package outline information go to http://www.supertex.com/packaging.html .) to-92 package outline 1 2 3 seating plane 1 2 3 front view 0.175 - 0.205 0.170 - 0.210 0.500 min 0.014 - 0.022 0.045 - 0.055 0.095 - 0.105 0.125 - 0.165 0.135 min 0.080 - 0.105 0.014 - 0.022 side view bottom view notes: all dimensions are in millimeters; all angles in degrees. doc.# dsfp-2n7000 a042507
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